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AiP2119

The AiP2119 is a high-speed 3-phase gate driver for power MOSFET and IGBT devices with three

independent high and low side referenced output channels. Built-in dead time protection and shoot-

through protection prevent damage to the half-bridge. The UVLO circuits prevent malfunction when VCC

and VBS are lower than the specified threshold voltage. A novel high-voltage BCD process and

common-mode noise canceling technique provide stable operation of high-side drivers under high dV/dt

noise conditions while achieving excellent negative transient voltage tolerance. An enable pin (ENB) is

included so that standby mode may be used to set the chip into a low quiescent current state to realize long

battery lifetime.

 

  • PN :

    AiP2119
  • Supply Voltagey(V) :

    5.5~16
  • Operating Temperature(℃) :

    -40~85
  • High Side Floating Supply Voltage-VB(V) :

    90
  • Output High Short Circuit Pulsed Current(A) :

    1.2
  • Output Low Short Circuit Pulsed Current(A) :

    2
  • Package :

    TSSOP20/TSSOP24/QFN24

Integrated 90V half-bridge high side driver

Built-in dead time protection

Shoot-through protection

Under voltage lockout for VCC and VBS

3.3V, 5V and 15V input logic compatible

Enable pin (ENB) for low standby current

IO+/IO-: 1200mA/2000mA

Dead time: 0.5us (typical)

Common-mode dV/dt noise cancellation circuit

Tolerant of negative transient voltage

Low dI/dt gate drive for better noise immunity

Specified from -40°C to +85°C

Packaging information: TSSOP20/TSSOP24/QFN24

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Related Products

AiP2119

The AiP2119 is a high-speed 3-phase gate driver for power MOSFET and IGBT devices with three independent high and low side referenced output channels. Built-in dead time protection and shoot- through protection prevent damage to the half-bridge. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. A novel high-voltage BCD process and common-mode noise canceling technique provide stable operation of high-side drivers under high dV/dt noise conditions while achieving excellent negative transient voltage tolerance. An enable pin (ENB) is included so that standby mode may be used to set the chip into a low quiescent current state to realize long battery lifetime.  

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